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Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.90.1 2.50.1 (1.0) (1.5)
Unit: mm
(0.4)
2.00.2
* High collector-emitter voltage (Base open) VCEO * High transition frequency fT * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.50.1
(1.0) 2.40.2
0.450.05 1
Features
(1.5)
R 0.9 R 0.7
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 -55 to +150 V mA mW C C V Unit V
1.00.1
(0.85)
Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature
3 (2.5)
2 (2.5)
1.250.05
0.550.1
1: Base 2: Collector 3: Emitter M-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) 2SD0662 2SD0662B VEBO ICEO hFE * VCE(sat) fT Cob IE = 10 A, IC = 0 VCE = 100 V, IB = 0 VCE = 10 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 50 10 30 Symbol VCEO Conditions IC = 100 A, IB = 0 Min 200 400 5 2 220 1.2 V A V MHz pF Typ Max Unit V
Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE P 30 to 100 Q 60 to 150 R 100 to 220
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002 SJC00195BED
4.10.2
4.50.1
1
2SD0662, 2SD0662B
PC Ta
800 120 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA
IC VCE
Ta = 25C IB = 2.0 mA 100 120
IC VBE
VCE = 10 V 25C Ta = 75C
Collector power dissipation PC (mW)
700 100
Collector current IC (mA)
600 500 400 300 200 100 0
Collector current IC (mA)
80
80
-25C
60
0.6 mA 0.4 mA
60
40 0.2 mA 20
40
20
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
IC I B
Collector-emitter saturation voltage VCE(sat) (V)
120 VCE = 10 V Ta = 25C 100 100
VCE(sat) IC
IC / IB = 10 3.0
IB VBE
VCE = 10 V Ta = 25C 2.5
Collector current IC (mA)
Base current IB (mA)
10
10
80
2.0
60
1
Ta = 75C 25C
1.5
40
1.0
0.1
-25C
20
0.5
0
0
0.4
0.8
1.2
1.6
2.0
0.01 0.01
0.1
1
0
0
0.2
0.4
0.6
0.8
1.0
Base current IB (mA)
Collector current IC (mA)
Base-emitter voltage VBE (V)
hFE IC
360 VCE = 10 V
160 140
fT I E
VCB = 10 V Ta = 25C
ICBO Ta
104 VCB = 250 V
Forward current transfer ratio hFE
Transition frequency fT (MHz)
300
120 100 80 60 40 20 0 -1
103
Ta = 75C 180 25C 120 -25C
ICBO (Ta) ICBO (Ta = 25C)
-10 -100
240
102
10
60
0 0.01
0.1
1
10
1
0
40
80
120
160
200
Collector current IC (mA)
Emitter current IE (mA)
Ambient temperature Ta (C)
2
SJC00195BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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